Description
® TM Packaged and Bondable Chips GaAs Schottky Diodes MS8001 * MS8004 .
Microsemi’s MS8000 series of GaAs Schottky barrier diodes are available in packaged form and bondable chip configurations.
Features
* Low-Noise Performance
* High Cut-off Frequency
* Passivated to Enhance Reliability
Applications
* Single and Balanced Mixers and Detectors
* Transceivers X, K and Ka Bands
* 30 and 60 GHz Radios
* Automotive Radar Detectors
Maximum Ratings
Incident Power
Forward Current Reverse Voltage Operating Temperature Storage Temperature
100 mW @ 25°C Derate Linearly to 0 at 175°C
15 m