MS8003

GaAs Schottky Diodes

Microsemi

MS8003 Features

* Low-Noise Performance

* High Cut-off Frequency

* Passivated to Enhance Reliability

* Packaged Diodes and Bondable Chips Applications

* Single and Balanced Mixers and Detectors

* Transceivers X, K and Ka Bands

* 30 and 60 GHz Radios

* Automotive Radar Detectors Max

MS8003 General Description

Microsemi’s MS8000 series of GaAs Schottky barrier diodes are available in packaged form and bondable chip configurations. These Schottky devices have low series resistance and low junction capacitance. The resulting low noise figure makes these diodes suitable for sensitive mixer and detector appli.

MS8003 Datasheet (308.22 KB)