Datasheet4U Logo Datasheet4U.com

ICE20N170B - N-Channel MOSFET

ICE20N170B Description

ICE20N170B N-Channel Enhancement Mode MOSFET .
TO-263 G Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous.

ICE20N170B Features

* r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 2

📥 Download Datasheet

Preview of ICE20N170B PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
ICE20N170B
Manufacturer
Micross Components
File Size
708.85 KB
Datasheet
ICE20N170B-MicrossComponentspdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • ICE20N170 - N-Channel Enhancement Mode MOSFET (Icemos)
  • ICE20N170FP - N-Channel Enhancement Mode MOSFET (Icemos)
  • ICE20N170U - N-Channel Enhancement Mode MOSFET (Icemos)
  • ICE20N65 - N-Channel Enhancement Mode MOSFET (Icemos)
  • ICE20N65FP - N-Channel Enhancement Mode MOSFET (Icemos)
  • ICE22N60 - N-Channel Enhancement Mode MOSFET (Icemos)
  • ICE22N60W - N-Channel Enhancement Mode MOSFET (Icemos)
  • ICE22N65W - N-Channel Enhancement Mode MOSFET (Icemos)

📌 All Tags

N-Channel MOSFET Micross Components
Micross Components ICE20N170B-like datasheet

ICE20N170B Stock/Price