ICE60N600D

N-Channel MOSFET

Micross Components

ICE60N600D Features

* r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified P

ICE60N600D General Description

TO-252 G Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source Voltage Power Dissipation Operatin.

ICE60N600D Datasheet (698.89 KB)