Datasheet4U Logo Datasheet4U.com

ICE60N600D - N-Channel MOSFET

ICE60N600D Description

ICE60N600D N-Channel Enhancement Mode MOSFET .
TO-252 G Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current A.

ICE60N600D Features

* r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified P

📥 Download Datasheet

Preview of ICE60N600D PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
ICE60N600D
Manufacturer
Micross Components
File Size
698.89 KB
Datasheet
ICE60N600D-MicrossComponentspdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • ICE60N130 - N-Channel Enhancement Mode MOSFET (Icemos)
  • ICE60N130FP - N-Channel Enhancement Mode MOSFET (Icemos)
  • ICE60N150 - N-Channel Enhancement Mode MOSFET (Icemos)
  • ICE60N150FP - N-Channel Enhancement Mode MOSFET (Icemos)
  • ICE60N160B - N-Channel Enhancement Mode MOSFET (Icemos)
  • ICE60N800D - N-Channel Enhancement Mode MOSFET (Icemos)
  • iCE65L04 - Ultra Low-Power FPGA Known Good Die (SiliconBlue)
  • ICE6N70 - N-Channel Enhancement Mode MOSFET (Icemos)

📌 All Tags

Micross Components ICE60N600D-like datasheet

ICE60N600D Stock/Price