* a 5mV offset and 5-µV/°C drift. The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). FEATURES LOW DRIFT | V GS1‐2 / T| ≤5µV/°C LOW LEAKAGE IG = 10pA TYP. LOW NOISE en = 8nV/√Hz TYP. LOW OFFSET VOLT
LS840
Micross
295.29 KB
Low drift monolithic dual jfet.
LS840 MONOLITHIC DUAL N-CHANNEL JFET
Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET
The LS840 is a high-performance monolithic dual .
📁 Related Datasheet
LS840 DUAL N-CHANNEL JFET AMPLIFIER (LINEAR SYSTEMS)
LS841 Low Drift Monolithic Dual JFET (Micross)
LS841 DUAL N-CHANNEL JFET AMPLIFIER (LINEAR SYSTEMS)
LS842 Low Drift Monolithic Dual JFET (Micross)
LS842 DUAL N-CHANNEL JFET AMPLIFIER (LINEAR SYSTEMS)
LS843 Low Drift Monolithic Dual JFET (Micross)
LS844 Low Drift Monolithic Dual JFET (Micross)
LS845 Low Drift Monolithic Dual JFET (Micross)
LS846 Low Drift Monolithic Dual JFET (Micross)
LS80C52 (LS80C5x) CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER (Intel Corporation)
