* a 15mV offset and 25-µV/°C drift. The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). FEATURES LOW DRIFT | V GS1‐2 / T| ≤25µV/°C LOW LEAKAGE IG = 15pA TYP. LOW NOISE en = 3nV/√Hz TYP. LOW OFFSET V
LS845
Micross
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Low drift monolithic dual jfet.
LS845 MONOLITHIC DUAL N-CHANNEL JFET
Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET
The LS845 is a high-performance monolithic dual .
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