* a 10mV offset and 10-µV/°C drift. The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). FEATURES LOW DRIFT | V GS1‐2 / T| ≤10µV/°C LOW LEAKAGE IG = 10pA TYP. LOW NOISE en = 8nV/√Hz TYP. LOW OFFSET V
LS841
Micross
294.89 KB
Low drift monolithic dual jfet.
LS841 MONOLITHIC DUAL N-CHANNEL JFET
Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET
The LS841 is a high-performance monolithic dual .
📁 Related Datasheet
LS840 Low Drift Monolithic Dual JFET (Micross)
LS840 DUAL N-CHANNEL JFET AMPLIFIER (LINEAR SYSTEMS)
LS841 DUAL N-CHANNEL JFET AMPLIFIER (LINEAR SYSTEMS)
LS842 Low Drift Monolithic Dual JFET (Micross)
LS842 DUAL N-CHANNEL JFET AMPLIFIER (LINEAR SYSTEMS)
LS843 Low Drift Monolithic Dual JFET (Micross)
LS844 Low Drift Monolithic Dual JFET (Micross)
LS845 Low Drift Monolithic Dual JFET (Micross)
LS846 Low Drift Monolithic Dual JFET (Micross)
LS80C52 (LS80C5x) CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER (Intel Corporation)
