QM30HA-H
Mitsubishi Electric Semiconductor
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Medium power switching use insulated type.
MITSUBISHI TRANSISTOR MODULES
QM30HA-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM30HA-H
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IC Col.
📁 Related Datasheet
QM30HA-HB - MEDIUM POWER SWITCHING USE INSULATED TYPE
(Mitsubishi Electric Semiconductor)
MITSUBISHI TRANSISTOR MODULES
QM30HA-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM30HA-HB
• • • • •
IC Collector current .
QM30HC-2H - INDUCTION HEATER USE NON-INSULATED TYPE
(Mitsubishi Electric Semiconductor)
MITSUBISHI TRANSISTOR MODULES
QM30HC-2H
INDUCTION HEATER USE
NON-INSULATED TYPE
QM30HC-2H
• • • •
IC Collector current .
QM30HQ-24 - DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE
(Mitsubishi Electric Semiconductor)
MITSUBISHI TRANSISTOR MODULES
QM30HQ-24
DRIVE USE FOR HIGH POWER TRANSISTOR
INSULATED TYPE
QM30HQ-24
• • • • •
IC Collector current .
QM30HY-2H - MEDIUM POWER SWITCHING USE INSULATED TYPE
(Mitsubishi Electric Semiconductor)
MITSUBISHI TRANSISTOR MODULES
QM30HY-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM30HY-2H
• • • • •
IC Collector current .
QM3001D - P-Ch 30V Fast Switching MOSFETs
(UBIQ)
QM3001D
P-Ch 30V Fast Switching MOSFETs
General Description
The QM3001D is the highest performance trench P-ch MOSFETs with extreme high cell density.
QM3001G - P-Ch 30V Fast Switching MOSFETs
(UBIQ)
QM3001G
P-Ch 30V Fast Switching MOSFETs
General Description
The QM3001G is the highest performance trench P-ch MOSFETs with extreme high cell density.
