* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=7.2V, VGG=0V)
* Pout>34dBm @ VDD=7.2V, Pin=16dBm Idq1=20mA(Vgg1adjust.),Idq2=300mA(Vgg2 adjust.) , @ VDD=7.2V, Pout=34dBm (Pin adjust.),
* ηT>30% Idq1=20mA(Vgg1 adjust.),Idq2=300mA(Vgg2 adjust.)
* IMD3
RA02M8087MD Datasheet (184.63 KB)
RA02M8087MD
Mitsubishi Electric
184.63 KB
Rohs compliance.
www.DataSheet4U.com ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA02M8087MD
BLOCK DIAGRAM
2 3 4
RoHS Co.
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