MGF7169C Datasheet (Mitsubishi) - UHF BAND GaAs POWER AMPLIFIER

MGF7169C, UHF BAND GaAs POWER AMPLIFIER

The MGF7169C is a monolithic microwave integrated circuit for use in CDMA base handheld phone.

PIN CONFIGURATION (TOP VIEW) Pi Vg1 Vd1 MC Vg2 : RF input Pi : RF output Po Vd1 : Drain bias 1 Vd2 : Drain bias 2 : Gate bias Vg MC : Note1 GND : Connect to GND CASE : Connect to GND Note1:Connect to matc

MGF7169C Features

* Low voltage operation : Vd=3.0V High output power : Po=28dBm typ. @f=1.85~1.91GHz Low distortion : ACP=-46dBc max. @Po=28dBm High efficiency : Id=520mA typ. @Po=28dBm Small size : 7.0 x 6.1 x 1.1 mm Surface mount package 2 Stage Amplifier External matching circuit is required APPLICATION 1.9GHz ban