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MGF4941AL SUPER LOW NOISE InGaAs HEMT

MGF4941AL Description

18/May/2007 MITSUBISHI SEMICONDUTOR MGF4941AL SUPER LOW NOISE InGaAs HEMT .
The MGF4941AL super-low noise HEMT (High Electron Mobility Transistor) is designed for use in Ku band amplifiers.

MGF4941AL Applications

* Please be aware, however, that the technical information contained in these materials does not comprise consent for the execution or use of intellectual property rights or other rights owned by Mitsubishi Electric Corporation. 2. Mitsubishi Electric does not assume responsibility for damages result

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SUPER LOW NOISE InGaAs HEMT Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor MGF4941AL-like datasheet