2N3296 Datasheet (Motorola) - NPN silicon annular transistor

2N3296, NPN silicon annular transistor

2N3296 (SILICON) NPN silicon annular transistor for linear amplifier applications from 2 to 100 MHz.

(10-102) Collector connected to case; stud isolated from case MAXIMUM RATINGS (Note 1) Rating Collector-Base Voltage Symbol Value Unit VCB 60 Vdc Collector-Emitter Voltage VCES 60 Vdc Emitter-Base Voltage VEB 3.0 Vdc Collector Current (Continuous) IC 700 mAdc Base Current (Continuous) IB 100 mAdc RF Input Power (Note 2) P.

10 RF Output Power (Note 2) P out 1.0 Wat