2N3298 Datasheet (Motorola) - NPN silicon annular transistor

2N3298, NPN silicon annular transistor

2N3298 (SILICON) CASE 22 (TO.IS) NPN silicon annular transistor for power oscillator applications to 150 MHz.

Collector connected to ces.

MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Device Dissipation (25°C Case Temperature) Derate Above 25°C Total Device Dissipation (25°C Ambient Temperature) Derate Above 25°C 2mW/oC Junction Temperature Storage Temperature Range Symbol VCB VCES VEB IC PD PD TJ Tstg Value 25 25 3.0 10