2N3789
Motorola
407.74kb
Pnp transistor.
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📁 Related Datasheet
2N378 - PNP Transistor
(Motorola)
76 A 2N3
(GERMANIUM)
For Spe~ifications, See 2N350A Data.
2N378 thru 2N380(GERlt\ANIUM)
2N459,A
C(A10S-3)E1 l~ l~ ·
PNP germanium power transi.
2N3782 - Bipolar PNP Device
(Seme LAB)
..
2N3782
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar PNP Device in a Hermetically seale.
2N3783 - PNP Transistor
(Motorola)
2N3783 thru 2N3785
(GERMANIUM)
CASE 20
(TO-72)
PNP germanium epitaxial mesa transistors for highgain, low-noise amplifier, oscillator and frequency .
2N3784 - PNP Transistor
(Motorola)
2N3783 thru 2N3785
(GERMANIUM)
CASE 20
(TO-72)
PNP germanium epitaxial mesa transistors for highgain, low-noise amplifier, oscillator and frequency .
2N3785 - PNP Transistor
(Motorola)
2N3783 thru 2N3785
(GERMANIUM)
CASE 20
(TO-72)
PNP germanium epitaxial mesa transistors for highgain, low-noise amplifier, oscillator and frequency .
2N3789 - Silicon PNP Power Transistor
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum.
2N3789 - PNP POWER TRANSISTORS
(Central Semiconductor)
2N3789 2N3791 2N3790 2N3792
SILICON PNP POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3789, 2N3790,.
2N3789 - Bipolar PNP Device
(Seme LAB)
2N3789
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar PNP.
2N3789 - EPITAXIAL-BASE TRANSISTORS
(Comset Semiconductor)
PNP 2N3789 – 2N3790 – 2N3791 – 2N3792 EPITAXIAL-BASE TRANSISTORS
The 2N3789, 2N3790, 2N3791 and 2N3792 are silicon epitaxial-base PNP power transistor.
2N3789 - SILICON PNP Transistor
(Toshiba)
SILICON PNP TRIPLE DIFFUSED TYPE
POWER AMPLIFIER, SWITCHING CIRCUIT AND REGULATOR APPLICATIONS.
FEATURES
. High Gain and Excellent hFE Linearity: h.
