Datasheet Details
- Part number
- 2N4066
- Manufacturer
- Motorola
- File Size
- 114.37 KB
- Datasheet
- 2N4066-Motorola.pdf
- Description
- DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS
2N4066 Description
2N4066 (SILICON) 2N4067 DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS Enhancement Mode MOS Field-Effect Transistors designed primarily for low-power.c.
2N4066 Applications
* DUAL P-CHANNEL MOS FIELD-EFFECT
TRANSISTORS
* High Forward Transadmittance IYfsl = 2_5 mmhos (Min) @VOS= -15 Vdc (2N4067)
* Low Forward Gate Current IG F = 2.5 pAdc (Max) @VGS = -25 Vdc
* Low Drain-Source "ON" Resistance rds(on) = 250 Ohms (Max)@VGS= -15 Vdc (2N4067)
📁 Related Datasheet
📌 All Tags