2N4066 Datasheet (Motorola) - DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS

2N4066, DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS

2N4066 (SILICON) 2N4067 DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS Enhancement Mode MOS Field-Effect Transistors designed primarily for low-power.

chopper or switching applications_ DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS High Forward Transadmittance IYfsl = 2_5 mmhos (Min) @VOS= -15 Vdc (2N4067) Low Forward Gate Current IG F = 2.5 pAdc (Max) @VGS = -25 Vdc Low Drain-Source "ON" Resistance rds(on) = 250 Ohms (Max)@VGS= -15 Vdc (2N4067) MAXIMUM RATINGS