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2N4067, 2N4066 - DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS

2N4067 Description

2N4066 (SILICON) 2N4067 DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS Enhancement Mode MOS Field-Effect Transistors designed primarily for low-power.c.

2N4067 Applications

* DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS
* High Forward Transadmittance IYfsl = 2_5 mmhos (Min) @VOS= -15 Vdc (2N4067)
* Low Forward Gate Current IG F = 2.5 pAdc (Max) @VGS = -25 Vdc
* Low Drain-Source "ON" Resistance rds(on) = 250 Ohms (Max)@VGS= -15 Vdc (2N4067)

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This datasheet PDF includes multiple part numbers: 2N4067, 2N4066. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
2N4067, 2N4066
Manufacturer
Motorola
File Size
114.37 KB
Datasheet
2N4066-Motorola.pdf
Description
DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS
Note
This datasheet PDF includes multiple part numbers: 2N4067, 2N4066.
Please refer to the document for exact specifications by model.

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DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS Motorola
Motorola 2N4067-like datasheet