MGP20N60U Datasheet (Motorola) - Insulated Gate Bipolar Transistor

MGP20N60U, Insulated Gate Bipolar Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGP20N60U/D Product Preview Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability.

It also provides fast switching characteristics and results in efficient operation at high frequencies.

Ind

MGP20N60U Features

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