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MGP21N60E Datasheet - Motorola

MGP21N60E_MotorolaInc.pdf

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Datasheet Details

Part number:

MGP21N60E

Manufacturer:

Motorola

File Size:

127.78 KB

Description:

Insulated gate bipolar transistor.

MGP21N60E, Insulated Gate Bipolar Transistor

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGP21N60E/D Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability.

Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on).

It also provide

MGP21N60E Features

* s, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Mot

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