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MGP21N60E - Insulated Gate Bipolar Transistor

MGP21N60E Description

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGP21N60E/D Insulated Gate Bipolar Transistor N *Channel Enhancement.

MGP21N60E Features

* s, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Mot

MGP21N60E Applications

* requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. This new E
* series introduces an Energy
* efficient, ESD protected, and short circuit rugged device.

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Datasheet Details

Part number
MGP21N60E
Manufacturer
Motorola
File Size
127.78 KB
Datasheet
MGP21N60E_MotorolaInc.pdf
Description
Insulated Gate Bipolar Transistor

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Insulated Gate Bipolar Transistor Motorola
Motorola MGP21N60E-like datasheet

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