Datasheet Details
Part number:
MGP21N60E
Manufacturer:
Motorola
File Size:
127.78 KB
Description:
Insulated gate bipolar transistor.
Datasheet Details
Part number:
MGP21N60E
Manufacturer:
Motorola
File Size:
127.78 KB
Description:
Insulated gate bipolar transistor.
MGP21N60E, Insulated Gate Bipolar Transistor
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGP21N60E/D Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability.
Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on).
It also provide
MGP21N60E Features
* s, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Mot
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