MRF174 Datasheet (Motorola) - N-CHANNEL MOS BROADBAND RF POWER FET

MRF174, N-CHANNEL MOS BROADBAND RF POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF174/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB Efficiency = 50% (Min) Excellent Thermal Stability, Ideally Suited For Class A Operation Facilitates Manual Gain Control, ALC and Modulation Techniques 100% Tested For Load Mismatch At All Phase Angles

MRF174 Features

* ance, Zin, ZOL

* MOTOROLA RF DEVICE DATA MRF174 7 DESIGN CONSIDERATIONS The MRF174 is a RF power N

* Channel enhancement mode field

* effect transistor (FET) designed especially for UHF power amplifier and oscillator applications. Motorola RF MOSFETs feature a vertical structure wi