* e transfer (Crss) capacitances on data sheets. The relationships between the inter
* terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in res
MRF176GV Datasheet (177.92 KB)
MRF176GV
Motorola
177.92 KB
N-channel mos broadband rf power fet.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF176GU/D
The RF MOSFET Line
RF Power Field-Effect Transistors
N
*Channel Enh.
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