Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF176GU/D The RF MOSFET Line RF Power Field-Effect Transistors N *Channel Enh.
Features
* e transfer (Crss) capacitances on data sheets. The relationships between the inter
* terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in res
Applications
* using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
* Electrical Performance MRF176GU @ 50 V, 400 MHz (“U” Suffix) Output Power
