MRF171A - MOSFET BROADBAND RF POWER FET
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF171A/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MOSFET Designed primarily for wideband large signal output and driver stages from 30 200 MHz.
Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 45 Watts Power Gain = 17 dB (Min) Efficiency = 60% (Min) Excellent Thermal Stability, Ideally Suited for Class A Operation Facilitates Manual G
