* yer in the gate region. Gate Termination
* The gates of these devices are essentially capacitors. Circuits that leave the gate open
* circuited or floating should be avoided. These conditions can result in turn
* on of the devices due to voltage build
* up on the input capa
MRF175LU Datasheet (144.96 KB)
MRF175LU
Tyco Electronics
144.96 KB
N-channel broadband rf power fet.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF175LU/D
The RF MOSFET Line
RF Power Field-Effect Transistors
N
*Channel Enh.
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