Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF175LU/D The RF MOSFET Line RF Power Field-Effect Transistors N *Channel Enh.
Features
* yer in the gate region. Gate Termination
* The gates of these devices are essentially capacitors. Circuits that leave the gate open
* circuited or floating should be avoided. These conditions can result in turn
* on of the devices due to voltage build
* up on the input capa
Applications
* using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
* Guaranteed Performance MRF175LU @ 28 V, 400 MHz (“U” Suffix) Output Power
