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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF MOSFET Line
RF Power Field-Effect Transistors
N–Channel Enhancement–Mode
Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Electrical Performance MRF176GU @ 50 V, 400 MHz (“U” Suffix) Output Power — 150 Watts Power Gain — 14 dB Typ Efficiency — 50% Typ MRF176GV @ 50 V, 225 MHz (“V” Suffix) Output Power — 200 Watts Power Gain — 17 dB Typ Efficiency — 55% Typ • 100% Ruggedness Tested At Rated Output Power • Low Thermal Resistance • Low Crss — 7.
MRF176GU Datasheet
