MRF174 - N-CHANNEL MOS BROADBAND RF POWER FET
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF174/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode Designed primarily for wideband large signal output and driver stages up to 200 MHz frequency range.
Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB Efficiency = 50% (Min) Excellent Thermal Stability, Ideally Suited For Class A Operation Facilitates Manual Gain
MRF174 Features
* llator applications. M/A-COM RF MOSFETs feature a vertical structure with a planar design, thus avoiding the processing difficulties associated with V
* groove vertical power FETs. M/A-COM Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with t
