* xceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination
* The gates of these devices are essentially capacitors. Circuits that leave the gate open
* circuited or floating should be avoided. These cond
MRF175LV Datasheet (138.89 KB)
MRF175LV
Motorola
138.89 KB
N-channel broadband rf power fet.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF175LU/D
The RF MOSFET Line
RF Power Field-Effect Transistors
N
*Channel Enh.
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