MRF175LU Datasheet (Motorola) - N-CHANNEL BROADBAND RF POWER FET

MRF175LU, N-CHANNEL BROADBAND RF POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF175LU/D The RF MOSFET Line RF Power Field-Effect Transistors N Channel Enhancement Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz.

The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

Guaranteed Performance MRF175LU @ 28 V, 400 MHz

MRF175LU Features

* xceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination

* The gates of these devices are essentially capacitors. Circuits that leave the gate open

* circuited or floating should be avoided. These cond