PZT751T1 HIGH CURRENT PNP SILICON TRANSISTOR

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by PZT751T1/D PNP Silicon Planar Epitaxial Transistor This PNP Silicon Epitaxial transist.

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Datasheet Specifications

Part number: PZT751T1
Manufacturer: Motorola
File Size: 111.86 KB
Datasheet: PZT751T1_Motorola.pdf
Description: HIGH CURRENT PNP SILICON TRANSISTOR

Features

* n body of a component may be up to 30 degrees cooler than the adjacent solder joints. STEP 5 STEP 6 STEP 7 STEP 4 HEATING VENT COOLING HEATING ZONES 3 & 6 ZONES 4 & 7 205° TO “SPIKE” “SOAK” 219°C 170°C PEAK AT SOLDER 160°C JOINT SOLDER IS LIQUID FOR 40 TO 80 SECONDS (

Applications

* The device is housed in the SOT
* 223 package which is designed for medium power surface mount applications.
* High Current: 2.0 Amp
* The SOT
* 223 Package can be soldered using wave or reflow.
* SOT
* 223 package ensures level mounting, resulting in impro

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PZT751T1 HIGH CURRENT PNP SILICON TRANSISTOR Motorola

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