GT30
NAiS
2.14 MB
Programmable display.
GT10/GT30 Technical Manual Matsushita Electric Works (Europe) AG ARCT1F340V1.0END 1/2002
Programmable Display
GT10/GT30
Technical Manual
Includes i.
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Important Notice
COPYRIGHT © 2009 B.
GT30J101 - Silicon N-Channel IGBT
(Toshiba Semiconductor)
GT30J101
Preliminary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J101
High Power Switching Applications
Unit: mm • • • • T.
GT30J110SRA - Silicon N-Channel IGBT
(Toshiba)
Discrete IGBTs Silicon N-Channel IGBT
GT30J110SRA
GT30J110SRA
1. Applications
• Dedicated to Voltage-Resonant Inverter Switching Applications • Dedi.
GT30J121 - Silicon N-Channel IGBT
(Toshiba Semiconductor)
GT30J121
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J121
High Power Switching Applications Fast Switching Applications
Uni.
GT30J122 - Silicon N-Channel IGBT
(Toshiba Semiconductor)
.DataSheet.co.kr
GT30J122
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J122
4TH GENERATION IGBT CURRENT RESONANCE INVERTE.
GT30J122A - Silicon N-Channel IGBT
(Toshiba)
Discrete IGBTs Silicon N-Channel IGBT
GT30J122A
1. Applications
• Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial.
GT30J126 - Silicon N-Channel IGBT
(Toshiba)
GT30J126
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J126
High Power Switching Applications Fast Switching Applications
• • .
GT30J127 - 600V 200A IGBT MOSFET
(ETC)
MOSFET 600V 200A IGBT Número de parte: GT30J127
Descripción:
IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient.
