GT30J122 Datasheet, Igbt, Toshiba Semiconductor

PDF File Details

Part number:

GT30J122

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

557.62kb

Download:

📄 Datasheet

Description:

Silicon n-channel igbt.

GT30J122 Application

• Applications
• Enhancement mode type High speed: tf = 0.25μs (Typ.) (IC = 50A) Low saturation voltage: VCE (sat) = 2.1V

TAGS

GT30J122

Toshiba Semiconductor

📁 Related Datasheet

GT30J121 - Silicon N-Channel IGBT (Toshiba Semiconductor)
GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Uni.

GT30J122A - Silicon N-Channel IGBT (Toshiba)
Discrete IGBTs Silicon N-Channel IGBT GT30J122A 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial.

GT30J126 - Silicon N-Channel IGBT (Toshiba)
GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications • • .

GT30J127 - 600V 200A IGBT MOSFET (ETC)
MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient.

GT30J101 - Silicon N-Channel IGBT (Toshiba Semiconductor)
GT30J101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications Unit: mm • • • • T.

GT30J110SRA - Silicon N-Channel IGBT (Toshiba)
Discrete IGBTs Silicon N-Channel IGBT GT30J110SRA GT30J110SRA 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications • Dedi.

GT30J301 - N-Channel IGBT (Toshiba Semiconductor)
GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit.

GT30J311 - N-Channel IGBT (Toshiba Semiconductor)
GT30J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit.

GT30J322 - Silicon N-Channel IGBT (Toshiba Semiconductor)
GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 FOURTH-GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLIC.

GT30J324 - Silicon N-Channel IGBT (Toshiba Semiconductor)
GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Uni.