Datasheet Specifications
- Part number
- GT30J122
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 557.62 KB
- Datasheet
- GT30J122_ToshibaSemiconductor.pdf
- Description
- Silicon N-Channel IGBT
Description
www.DataSheet.co.kr GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTE.
Applications
* Enhancement mode type High speed: tf = 0.25μs (Typ. ) (IC = 50A) Low saturation voltage: VCE (sat) = 2.1V (Typ. ) (IC = 50A) Unit: mm ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissGT30J122 Distributors
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