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GT30J122A - Silicon N-Channel IGBT

GT30J122A Description

Discrete IGBTs Silicon N-Channel IGBT GT30J122A 1.Applications * Dedicated to Current-Resonant Inverter Switching Applications * Dedi.

GT30J122A Features

* (1) 4th generation (2) Enhancement mode (3) High-speed switching : tf = 0.20 µs (typ. ) (IC = 50 A) (4) Low saturation voltage : VCE(sat) = 1.7 V (typ. ) (IC = 50 A) 3. Packaging and Internal Circuit GT30J122A TO-3P(N) 1 : Gate 2 : Collector 3 : Emitter Start of commercial production 2010-06 1 2

GT30J122A Applications

* Dedicated to Current-Resonant Inverter Switching Applications

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Silicon N-Channel IGBT Toshiba
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