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GT30J122A Datasheet - Toshiba

GT30J122A Silicon N-Channel IGBT

GT30J122A Features

* (1) 4th generation (2) Enhancement mode (3) High-speed switching : tf = 0.20 µs (typ.) (IC = 50 A) (4) Low saturation voltage : VCE(sat) = 1.7 V (typ.) (IC = 50 A) 3. Packaging and Internal Circuit GT30J122A TO-3P(N) 1 : Gate 2 : Collector 3 : Emitter Start of commercial production 2010-06 1 2

GT30J122A Datasheet (193.44 KB)

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Datasheet Details

Part number:

GT30J122A

Manufacturer:

Toshiba ↗

File Size:

193.44 KB

Description:

Silicon n-channel igbt.

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GT30J122A Silicon N-Channel IGBT Toshiba

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