Datasheet Specifications
- Part number
- GT35J321
- Manufacturer
- Toshiba ↗
- File Size
- 316.82 KB
- Datasheet
- GT35J321_Toshiba.pdf
- Description
- Silicon N-Channel IGBT
Description
GT35J321 www.DataSheet4U.com TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT35J321 Fourth-generation IGBT Current Resonance Inve.
Applications
* z z z z z Enhancement mode High speed: tf = 0.19 μs (typ. ) (IC = 50 A) Low saturation voltage: VCE (sat) = 1.9 V (typ. ) (IC = 50 A) FRD included between emitter and collector Toshiba package name: TO-3P(N)IS Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics CollectorGT35J321 Distributors
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