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GT35J321 - Silicon N-Channel IGBT

GT35J321 Description

GT35J321 www.DataSheet4U.com TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT35J321 Fourth-generation IGBT Current Resonance Inve.

GT35J321 Applications

* z z z z z Enhancement mode High speed: tf = 0.19 μs (typ. ) (IC = 50 A) Low saturation voltage: VCE (sat) = 1.9 V (typ. ) (IC = 50 A) FRD included between emitter and collector Toshiba package name: TO-3P(N)IS Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector
* emitter vol

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Silicon N-Channel IGBT Toshiba
Toshiba GT35J321-like datasheet