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GT30J341 - Silicon N-Channel IGBT

GT30J341 Description

Discrete IGBTs Silicon N-Channel IGBT GT30J341 1.Applications * Motor Drivers 2..

GT30J341 Features

* (1) Sixth generation (2) Low saturation voltage: VCE(sat) = 1.5 V (typ. ) (IC = 30 A) (3) High junction temperature: Tj = 175 (max) (4) FRD included between emitter and collector 3. Packaging and Internal Circuit GT30J341 TO-3P(N) 1: Gate 2: Collector (Heat sink) 3: Emitter Start of commercial p

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Silicon N-Channel IGBT Toshiba
Toshiba GT30J341-like datasheet

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