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GT30J341

Silicon N-Channel IGBT

GT30J341 Features

* (1) Sixth generation (2) Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 30 A) (3) High junction temperature: Tj = 175 (max) (4) FRD included between emitter and collector 3. Packaging and Internal Circuit GT30J341 TO-3P(N) 1: Gate 2: Collector (Heat sink) 3: Emitter Start of commercial p

GT30J341 Datasheet (295.62 KB)

Preview of GT30J341 PDF

Datasheet Details

Part number:

GT30J341

Manufacturer:

Toshiba ↗

File Size:

295.62 KB

Description:

Silicon n-channel igbt.

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GT30J341 Silicon N-Channel IGBT Toshiba

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