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GT30N135SRA Datasheet - Toshiba

GT30N135SRA Silicon N-Channel IGBT

GT30N135SRA Features

* (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode (FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: IGBT tf = 0.25 µs (typ.) (IC = 60 A) (5) Low saturation voltage: VCE(sat) = 1.65 V (typ.) (IC = 30 A, Ta = 25

* ) (6) High junction

GT30N135SRA Datasheet (559.98 KB)

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Datasheet Details

Part number:

GT30N135SRA

Manufacturer:

Toshiba ↗

File Size:

559.98 KB

Description:

Silicon n-channel igbt.

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GT30N135SRA Silicon N-Channel IGBT Toshiba

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