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GT30N135SRA - Silicon N-Channel IGBT

GT30N135SRA Description

Discrete IGBTs Silicon N-Channel IGBT GT30N135SRA GT30N135SRA 1.Applications * Dedicated to Voltage-Resonant Inverter Switching Application.

GT30N135SRA Features

* (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode (FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: IGBT tf = 0.25 µs (typ. ) (IC = 60 A) (5) Low saturation voltage: VCE(sat) = 1.65 V (typ. ) (IC = 30 A, Ta = 25
* ) (6) High junction

GT30N135SRA Applications

* Dedicated to Voltage-Resonant Inverter Switching Applications
* Dedicated to Soft Switching Applications
* Dedicated to Induction Cooktops and Home Appliance Applications Note: The product(s) described herein should not be used for any other application. Note 1: This transi

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Silicon N-Channel IGBT Toshiba
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