Datasheet4U Logo Datasheet4U.com

GT30J126 Silicon N-Channel IGBT

📥 Download Datasheet Datasheet Preview Page 1

Description

GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications .

📥 Download Datasheet

Preview of GT30J126 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Applications

* Fast Switching Applications
* Fourth-generation IGBT Enhancement mode type Fast switching (FS): High speed: tf = 0.05 μs (typ. ) Low switching loss : Eon = 1.00 mJ (typ. ) : Eoff = 0.80 mJ (typ. )
* Low saturation voltage: VCE (sat) = 1.95 V (typ. ) Unit: mm Absolute

GT30J126 Distributors

📁 Related Datasheet

GT30J121 GT30J122 GT30J127 GT30J101 GT30J301 GT30J311

📌 All Tags

GT30J126 Silicon N-Channel IGBT Toshiba
Toshiba GT30J126-like datasheet
GT30J122A
GT30J110SRA
GT30J341
GT30J65MRB
GT30N135SRA