Datasheet Details
Part number:
GT30J126
Manufacturer:
File Size:
208.62 KB
Description:
Silicon n-channel igbt.
Datasheet Details
Part number:
GT30J126
Manufacturer:
File Size:
208.62 KB
Description:
Silicon n-channel igbt.
GT30J126, Silicon N-Channel IGBT
GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): High speed: tf = 0.05 μs (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) Low saturation voltage: VCE (sat) = 1.95 V (typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitte
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