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GT30J126 - Silicon N-Channel IGBT

GT30J126 Description

GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications .

GT30J126 Applications

* Fast Switching Applications
* Fourth-generation IGBT Enhancement mode type Fast switching (FS): High speed: tf = 0.05 μs (typ. ) Low switching loss : Eon = 1.00 mJ (typ. ) : Eoff = 0.80 mJ (typ. )
* Low saturation voltage: VCE (sat) = 1.95 V (typ. ) Unit: mm Absolute

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Silicon N-Channel IGBT Toshiba
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