Datasheet Details
Part number:
GT30J311
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
480.95 KB
Description:
N-channel igbt.
GT30J311_ToshibaSemiconductor.pdf
GT30J311_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
GT30J311
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
480.95 KB
Description:
N-channel igbt.
GT30J311, N-Channel IGBT
GT30J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm Third-generation IGBT Enhancement mode type High speed : tf = 0.30μs (Max.) Low saturation voltage : VCE (sat) = 2.7V (Max.) FRD included between emitter and collector MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector Emitter Voltage Gate Emitter Voltage DC Collector Current 1ms Emitter Collector Forward
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