Datasheet Specifications
- Part number
- GT30J311
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 480.95 KB
- Datasheet
- GT30J311_ToshibaSemiconductor.pdf
- Description
- N-Channel IGBT
Description
GT30J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit.
Applications
* MOTOR CONTROL APPLICATIONS Unit: mm Third-generation IGBT Enhancement mode type High speed : tf = 0.30μs (Max. ) Low saturation voltage : VCE (sat) = 2.7V (Max. ) FRD included between emitter and collector MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC CollectorGT30J311 Distributors
📁 Related Datasheet
📌 All Tags