GT30J110SRA Datasheet, Igbt, Toshiba

GT30J110SRA Features

• Igbt (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode (FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: IGBT tf = 0.17 µs (

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Part number:

GT30J110SRA

Manufacturer:

Toshiba ↗

File Size:

539.97kb

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📄 Datasheet

Description:

Silicon n-channel igbt.

GT30J110SRA Application

• Applications
• Dedicated to Voltage-Resonant Inverter Switching Applications
• Dedicated to Soft Switching Applications
• De

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GT30J110SRA

Toshiba

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