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GT30J110SRA Datasheet - Toshiba

GT30J110SRA Silicon N-Channel IGBT

GT30J110SRA Features

* (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode (FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: IGBT tf = 0.17 µs (typ.) (IC = 60 A) (5) Low saturation voltage: VCE(sat) = 1.60 V (typ.) (IC = 30 A, Ta = 25

* ) (6) High junction

GT30J110SRA Datasheet (539.97 KB)

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Datasheet Details

Part number:

GT30J110SRA

Manufacturer:

Toshiba ↗

File Size:

539.97 KB

Description:

Silicon n-channel igbt.

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