Datasheet Specifications
- Part number
- GT30J110SRA
- Manufacturer
- Toshiba ↗
- File Size
- 539.97 KB
- Datasheet
- GT30J110SRA-Toshiba.pdf
- Description
- Silicon N-Channel IGBT
Description
Discrete IGBTs Silicon N-Channel IGBT GT30J110SRA GT30J110SRA 1.Applications * Dedicated to Voltage-Resonant Inverter Switching Application.
Features
* (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode (FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: IGBT tf = 0.17 µs (typ. ) (IC = 60 A) (5) Low saturation voltage: VCE(sat) = 1.60 V (typ. ) (IC = 30 A, Ta = 25Applications
* Dedicated to Voltage-Resonant Inverter Switching ApplicationsGT30J110SRA Distributors
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