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GT30J322 Datasheet - Toshiba Semiconductor

GT30J322_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

GT30J322

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

422.05 KB

Description:

Silicon n-channel igbt.

GT30J322, Silicon N-Channel IGBT

GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 FOURTH-GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS z FRD included between emitter and collector z Enhancement mode type z High speed : tf = 0.25μs (Typ.) (IC = 50A) z Low saturation voltage : VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Unit: mm CHARACTERISTIC SYMBOL RATING UNIT Collector Emitter Voltage Gate Emitter Voltage Collector Cu

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