GT30J322 Datasheet (422.05 KB)
GT30J322
Toshiba ↗ Semiconductor
422.05 KB
Silicon n-channel igbt.
GT30J322
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT30J322
FOURTH-GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLIC.
📁 Related Datasheet
GT30J324 - Silicon N-Channel IGBT
(Toshiba Semiconductor)
GT30J324
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J324
High Power Switching Applications Fast Switching Applications
Uni.
GT30J301 - N-Channel IGBT
(Toshiba Semiconductor)
GT30J301
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT30J301
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
Unit.
GT30J311 - N-Channel IGBT
(Toshiba Semiconductor)
GT30J311
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT30J311
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
Unit.
GT30J341 - Silicon N-Channel IGBT
(Toshiba)
Discrete IGBTs Silicon N-Channel IGBT
GT30J341
1. Applications
• Motor Drivers
2. Features
(1) Sixth generation (2) Low saturation voltage: VCE(sat) =.
GT30J101 - Silicon N-Channel IGBT
(Toshiba Semiconductor)
GT30J101
Preliminary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J101
High Power Switching Applications
Unit: mm • • • • T.
GT30J110SRA - Silicon N-Channel IGBT
(Toshiba)
Discrete IGBTs Silicon N-Channel IGBT
GT30J110SRA
GT30J110SRA
1. Applications
• Dedicated to Voltage-Resonant Inverter Switching Applications • Dedi.
GT30J121 - Silicon N-Channel IGBT
(Toshiba Semiconductor)
GT30J121
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J121
High Power Switching Applications Fast Switching Applications
Uni.
GT30J122 - Silicon N-Channel IGBT
(Toshiba Semiconductor)
.DataSheet.co.kr
GT30J122
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J122
4TH GENERATION IGBT CURRENT RESONANCE INVERTE.
