GT30J322 Datasheet, Igbt, Toshiba Semiconductor

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Part number:

GT30J322

Manufacturer:

Toshiba ↗ Semiconductor

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422.05kb

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📄 Datasheet

Description:

Silicon n-channel igbt.

GT30J322 Application

• Applications z FRD included between emitter and collector z Enhancement mode type z High speed : tf = 0.25μs (Typ.) (IC = 50A) z Low saturation

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GT30J322

Toshiba Semiconductor

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