Datasheet Specifications
- Part number
- GT30J322
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 422.05 KB
- Datasheet
- GT30J322_ToshibaSemiconductor.pdf
- Description
- Silicon N-Channel IGBT
Description
GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 FOURTH-GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLIC.
Applications
* z FRD included between emitter and collector z Enhancement mode type z High speed : tf = 0.25μs (Typ. ) (IC = 50A) z Low saturation voltage : VCE (sat) = 2.1V (Typ. ) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Unit: mm CHARACTERISTIC SYMBOL RATING UNIT CollectorGT30J322 Distributors
📁 Related Datasheet
📌 All Tags