GT30J121 Silicon N-Channel IGBT

Toshiba Semiconductor

Description

GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Uni.

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Datasheet Specifications

Part number: GT30J121
Manufacturer: Toshiba ↗ Semiconductor
File Size: 182.80 KB
Datasheet: GT30J121_ToshibaSemiconductor.pdf
Description: Silicon N-Channel IGBT

Applications

* Fast Switching Applications Unit: mm
* Fourth-generation IGBT
* Enhancement mode type
* Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 μs (typ. ) Low switching loss : Eon = 1.00 mJ (typ. ) : Eoff = 0.80 mJ (typ. )
* Low saturati

GT30J121 Distributors

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GT30J121 Silicon N-Channel IGBT Toshiba Semiconductor

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