Datasheet Details
Part number:
GT30J121
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
182.80 KB
Description:
Silicon n-channel igbt.
GT30J121_ToshibaSemiconductor.pdf
GT30J121_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
GT30J121
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
182.80 KB
Description:
Silicon n-channel igbt.
GT30J121, Silicon N-Channel IGBT
GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Unit: mm Fourth-generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 μs (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) Low saturation voltage: VCE (sat) = 2.0 V (typ.) Absolute Maximum Ratings (Ta = 25°C) Charac
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