GT30J301 Datasheet, Igbt, Toshiba Semiconductor

PDF File Details

Part number:

GT30J301

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

316.32kb

Download:

📄 Datasheet

Description:

N-channel igbt.

Datasheet Preview: GT30J301 📥 Download PDF (316.32kb)
Page 2 of GT30J301 Page 3 of GT30J301

GT30J301 Application

  • Applications MOTOR CONTROL APPLICATIONS Unit: mm l The 3rd Generation l Enhancement
  • Mode l High Speed : tf = 0.30µs (Max.) l Low Satur

TAGS

GT30J301
N-Channel
IGBT
Toshiba Semiconductor

📁 Related Datasheet

GT30J311 - N-Channel IGBT (Toshiba Semiconductor)
GT30J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit.

GT30J322 - Silicon N-Channel IGBT (Toshiba Semiconductor)
GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 FOURTH-GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLIC.

GT30J324 - Silicon N-Channel IGBT (Toshiba Semiconductor)
GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Uni.

GT30J341 - Silicon N-Channel IGBT (Toshiba)
Discrete IGBTs Silicon N-Channel IGBT GT30J341 1. Applications • Motor Drivers 2. Features (1) Sixth generation (2) Low saturation voltage: VCE(sat) =.

GT30J101 - Silicon N-Channel IGBT (Toshiba Semiconductor)
GT30J101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications Unit: mm • • • • T.

GT30J110SRA - Silicon N-Channel IGBT (Toshiba)
Discrete IGBTs Silicon N-Channel IGBT GT30J110SRA GT30J110SRA 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications • Dedi.

GT30J121 - Silicon N-Channel IGBT (Toshiba Semiconductor)
GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Uni.

GT30J122 - Silicon N-Channel IGBT (Toshiba Semiconductor)
.DataSheet.co.kr GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTE.

GT30J122A - Silicon N-Channel IGBT (Toshiba)
Discrete IGBTs Silicon N-Channel IGBT GT30J122A 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial.

GT30J126 - Silicon N-Channel IGBT (Toshiba)
GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications • • .

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts