GT30J301 N-Channel IGBT

Toshiba Semiconductor

Description

GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit.

📥 Download Datasheet

GT30J301 Datasheet Preview — Preview of GT30J301 PDF

Datasheet Specifications

Part number: GT30J301
Manufacturer: Toshiba ↗ Semiconductor
File Size: 316.32 KB
Datasheet: GT30J301_ToshibaSemiconductor.pdf
Description: N-Channel IGBT

Applications

* MOTOR CONTROL APPLICATIONS Unit: mm l The 3rd Generation l Enhancement
* Mode l High Speed : tf = 0.30µs (Max. ) l Low Saturation Voltage : VCE (sat) = 2.7V (Max. ) l FRD included between Emitter and Collector MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector
* Emitter Voltage

GT30J301 Distributors

📁 Related Datasheet

GT30J341 GT30J110SRA GT30J122A GT30J126 GT30J127 GT30J65MRB

📌 All Tags

GT30J301 N-Channel IGBT Toshiba Semiconductor

Toshiba Semiconductor GT30J301-like datasheet