GT30J301 Datasheet - Toshiba Semiconductor

GT30J301 N-Channel IGBT

GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm l The 3rd Generation l Enhancement Mode l High Speed : tf = 0.30µs (Max.) l Low Saturation Voltage : VCE (sat) = 2.7V (Max.) l FRD included between Emitter and Collector MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector Emitter Voltage Gate Emitter Voltage DC Collector Current 1ms Emitter Collecto.

GT30J301 Datasheet (316.32 KB)