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GT30J101 Silicon N-Channel IGBT

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Description

GT30J101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications Unit: mm *.

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Applications

* Unit: mm
* The 3rd Generation Enhancement-Mode High Speed: tf = 0.30 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max) Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation

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GT30J101 Silicon N-Channel IGBT Toshiba Semiconductor
Toshiba Semiconductor GT30J101-like datasheet
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