NCE01H21T Datasheet, Mosfet, NCE Power Semiconductor

NCE01H21T Features

  • Mosfet
  • VDSS =100V,ID =210A RDS(ON) < 4.0mΩ @ VGS=10V (Typ:3.1 mΩ)
  • Good stability and uniformity with high EAS
  • High density cell design for ultra low Rdson

PDF File Details

Part number:

NCE01H21T

Manufacturer:

NCE Power Semiconductor

File Size:

294.59kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE01H21T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

Datasheet Preview: NCE01H21T 📥 Download PDF (294.59kb)
Page 2 of NCE01H21T Page 3 of NCE01H21T

NCE01H21T Application

  • Applications General Features
  • VDSS =100V,ID =210A RDS(ON) < 4.0mΩ @ VGS=10V (Typ:3.1 mΩ)
  • Good stability and uniformity with hi

TAGS

NCE01H21T
N-Channel
Enhancement
Mode
Power
MOSFET
NCE Power Semiconductor

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