NCE01H21TC Datasheet, Mosfet, NCE Power Semiconductor

NCE01H21TC Features

• Mosfet
• VDSS =100V,ID =210A RDS(ON) < 4.2mΩ @ VGS=10V （Typ：3.3 mΩ）
• Good stability and uniformity with high EAS
• High density cell design for ultra low Rdson

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Part number:

NCE01H21TC

Manufacturer:

NCE Power Semiconductor

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302.51kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE01H21TC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

NCE01H21TC Application

• Applications General Features
• VDSS =100V,ID =210A RDS(ON) < 4.2mΩ @ VGS=10V （Typ：3.3 mΩ）
• Good stability and uniformity with hi

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NCE01H21TC

NCE Power Semiconductor

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