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NCE01H29T

N-Channel Enhancement Mode Power MOSFET

NCE01H29T Features

* VDSS =100V,ID =290A RDS(ON) < 3.0mΩ @ VGS=10V (Typ:2.4mΩ)

* Good stability and uniformity with high EAS

* High density cell design for ultra low Rdson

* Fully characterized avalanche voltage and current

* Excellent package for good heat dissipation Schematic diagram Applicati

NCE01H29T Datasheet (312.63 KB)

Preview of NCE01H29T PDF

Datasheet Details

Part number:

NCE01H29T

Manufacturer:

NCE Power Semiconductor

File Size:

312.63 KB

Description:

N-channel enhancement mode power mosfet.

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NCE01H29T N-Channel Enhancement Mode Power MOSFET NCE Power Semiconductor

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