NCE01H29T Datasheet, Mosfet, NCE Power Semiconductor

NCE01H29T Features

• Mosfet
• VDSS =100V,ID =290A RDS(ON) < 3.0mΩ @ VGS=10V （Typ：2.4mΩ）
• Good stability and uniformity with high EAS
• High density cell design for ultra low Rdson

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Part number:

NCE01H29T

Manufacturer:

NCE Power Semiconductor

File Size:

312.63kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE01H29T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

NCE01H29T Application

• Applications General Features
• VDSS =100V,ID =290A RDS(ON) < 3.0mΩ @ VGS=10V （Typ：2.4mΩ）
• Good stability and uniformity with hig

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NCE01H29T

NCE Power Semiconductor

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