NCE01H29T N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

Description

http://www.ncepower.com Pb Free Product NCE01H29T NCE N-Channel Enhancement Mode Power MOSFET .
The NCE01H29T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: NCE01H29T
Manufacturer: NCE Power Semiconductor
File Size: 312.63 KB
Datasheet: NCE01H29T-NCEPowerSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDSS =100V,ID =290A RDS(ON) < 3.0mΩ @ VGS=10V （Typ：2.4mΩ）
* Good stability and uniformity with high EAS
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Excellent package for good heat dissipation Schematic diagram Applicati

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NCE01H29T N-Channel Enhancement Mode Power MOSFET NCE Power Semiconductor

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