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NCE01H29T - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE01H29T
Manufacturer	NCE Power Semiconductor
File Size	312.63 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE01H29T-NCEPowerSemiconductor.pdf

NCE01H29T Product details

Description

The NCE01H29T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDSS =100V,ID =290A RDS(ON) < 3.0mΩ @ VGS=10V （Typ：2.4mΩ）.
Good stability and uniformity with high EAS.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Excellent package for good heat dissipation Schematic diagram.

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Published: Jun 6, 2015 |