NCE01P30I Datasheet, Mosfet, NCE Power Semiconductor

NCE01P30I Features

• Mosfet
• VDS =-100V,ID =-30A RDS(ON) <58mΩ @ VGS=-10V (Typ:44mΩ) RDS(ON) <65mΩ @ VGS=-4.5V (Typ:48mΩ)
• Super high dense cell design
• Advanced trench process technolog

PDF File Details

Part number:

NCE01P30I

Manufacturer:

NCE Power Semiconductor

File Size:

313.48kb

Download:

📄 Datasheet

Description:

P-channel enhancement mode power mosfet. The NCE01P30I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

NCE01P30I Application

• Applications It is ESD protested. General Features
• VDS =-100V,ID =-30A RDS(ON) <58mΩ @ VGS=-10V (Typ:44mΩ) RDS(ON) <65mΩ @ VGS=-4.5V (Ty

TAGS

NCE01P30I

NCE Power Semiconductor

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