NCE01P30K Datasheet, Mosfet, NCE Power Semiconductor

NCE01P30K Features

  • Mosfet
  • VDS =-100V,ID =-30A RDS(ON) <58mΩ @ VGS=-10V (Typ:44mΩ) RDS(ON) <65mΩ @ VGS=-4.5V (Typ:48mΩ)
  • Super high dense cell design
  • Advanced trench process technolog

PDF File Details

Part number:

NCE01P30K

Manufacturer:

NCE Power Semiconductor

File Size:

398.45kb

Download:

📄 Datasheet

Description:

P-channel enhancement mode power mosfet. The NCE01P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

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NCE01P30K Application

  • Applications It is ESD protested. General Features
  • VDS =-100V,ID =-30A RDS(ON) <58mΩ @ VGS=-10V (Typ:44mΩ) RDS(ON) <65mΩ @ VGS=-4.5V (Ty

TAGS

NCE01P30K
P-Channel
Enhancement
Mode
Power
MOSFET
NCE Power Semiconductor

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