NCE2025S Datasheet, Mosfet, NCE Power Semiconductor

NCE2025S Features

• Mosfet
• VDS =20V,ID =25A RDS(ON) < 4mΩ @ VGS=4.5V RDS(ON) < 6mΩ @ VGS=2.5V
• High density cell design for ultra low Rdson
• Fully characterized Avalanche voltage and cu

PDF File Details

Part number:

NCE2025S

Manufacturer:

NCE Power Semiconductor

File Size:

395.27kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE2025S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

NCE2025S Application

• Applications General Features
• VDS =20V,ID =25A RDS(ON) < 4mΩ @ VGS=4.5V RDS(ON) < 6mΩ @ VGS=2.5V
• High density cell design for u

TAGS

NCE2025S

NCE Power Semiconductor

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