NCE20H11K Datasheet, Mosfet, NCE Power Semiconductor

NCE20H11K Features

• Mosfet
• VDS =20V,ID =110A RDS(ON) <4mΩ @ VGS=10V (Typ3mΩ)
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current

PDF File Details

Part number:

NCE20H11K

Manufacturer:

NCE Power Semiconductor

File Size:

433.31kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE20H11K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

NCE20H11K Application

• Applications General Features
• VDS =20V,ID =110A RDS(ON) <4mΩ @ VGS=10V (Typ3mΩ)
• High density cell design for ultra low Rdson

TAGS

NCE20H11K

NCE Power Semiconductor

📁 Related Datasheet

NCE2003 - N & P-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
http://.ncepower. Pb Free Product NCE2003 N and P-Channel Enhancement Mode Power MOSFET Description The NCE2003 uses advanced trench technolog.

NCE2004NE - N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
http://.ncepower. Pb Free Product NCE2004NE NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2004NE uses advanced trench technol.

NCE2006NE - N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
http://.ncepower. Pb Free Product NCE2006NE NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2006NE uses advanced trench technol.

NCE2007N - N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
http://.ncepower. Pb Free Product NCE2007N SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE2007N uses advanced trench technol.

NCE2008E - NCE N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
http://.ncepower. Pb Free Product NCE2008E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2008E uses advanced trench technolog.

NCE2010E - NCE N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
http://.ncepower. Pb Free Product NCE2010E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2010E uses advanced trench technolog.

NCE2011E - NCE N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
http://.ncepower. Pb Free Product NCE2011E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2011E uses advanced trench technolog.

NCE2012 - NCE N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
http://.ncepower. Pb Free Product NCE2012 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2012 uses advanced trench technology .

NCE2014ES - N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
http://.ncepower. Pb Free Product NCE2014ES NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2014ES uses advanced trench technol.

NCE2025I - N-Channel MOSFET (VBsemi)
NCE2025I-VB NCE2025I-VB Datasheet N-Channel 30-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) （mΩ） 7 at VGS = 10 V 30 9 at VGS= 4.