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NCEP028N85 Datasheet - NCE Power Semiconductor

N-Channel Super Trench II Power MOSFET

NCEP028N85 Features

* VDS =85V,ID =200A RDS(ON)=2.55mΩ , typical (TO-220)@ VGS=10V RDS(ON)=2.4mΩ , typical (TO-263)@ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-22

NCEP028N85 General Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency.

NCEP028N85 Datasheet (351.54 KB)

Preview of NCEP028N85 PDF

Datasheet Details

Part number:

NCEP028N85

Manufacturer:

NCE Power Semiconductor

File Size:

351.54 KB

Description:

N-channel super trench ii power mosfet.

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TAGS

NCEP028N85 N-Channel Super Trench Power MOSFET NCE Power Semiconductor

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