NCEP048NH150T Datasheet (NCE Power Semiconductor) - N-Channel Super Trench III Power MOSFET

NCEP048NH150T, N-Channel Super Trench III Power MOSFET

The series of devices uses Super Trench III technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequenc

NCEP048NH150T Features

* VDS =150V,ID =223A (Silicon Limited) RDS(ON)=3.9mΩ , typical @ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating 100% UIS TESTED! 100% ΔVds TESTED! TO-247-3L Schematic Diagram Package