NCEP048NH150T N-Channel Super Trench III Power MOSFET

NCE Power Semiconductor

Description

http://www.ncepower.com NCEP048NH150T NCE N-Channel Super Trench III Power MOSFET .
The series of devices uses Super Trench III technology that is uniquely optimized to provide the most efficient high frequency switching performance.

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Datasheet Specifications

Part number: NCEP048NH150T
Manufacturer: NCE Power Semiconductor
File Size: 800.40 KB
Datasheet: NCEP048NH150T-NCEPowerSemiconductor.pdf
Description: N-Channel Super Trench III Power MOSFET

Features

* VDS =150V,ID =223A (Silicon Limited) RDS(ON)=3.9mΩ , typical @ VGS=10V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating 100% UIS TESTED! 100% ΔVds TESTED! TO-247-3L Schematic Diagram Package

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NCEP048NH150T N-Channel Super Trench III Power MOSFET NCE Power Semiconductor

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